• DocumentCode
    1119606
  • Title

    Heterojunction bipolar transistors for microwave and millimeter-wave integrated circuits

  • Author

    Asbeck, P.M. ; Chang, M.F. ; Wang, K.C. ; Miller, D.L. ; Sullivan, G.J. ; Sheng, N.H. ; Sovero, E. ; Higgins, J.A.

  • Author_Institution
    Rockwell International Science Center, Thousand Oaks, CA
  • Volume
    34
  • Issue
    12
  • fYear
    1987
  • fDate
    12/1/1987 12:00:00 AM
  • Firstpage
    2571
  • Lastpage
    2579
  • Abstract
    This paper reviews the present status of GaAlAs/GaAs HBT technology and projects the impact of these devices on microwave and millimeter-wave integrated circuits. Devices with fmaxabove 120 GHz are described. Differential amplifiers are shown to have offset voltages with standard deviation below 2 mV and voltage gain as high as 200 per stage. Breakdown voltages (BVCBO) above 20 V are demonstrated. Frequency dividers operating above 20 GHz are described.
  • Keywords
    Doping; Electrons; FETs; Gallium arsenide; Heterojunction bipolar transistors; Microwave devices; Millimeter wave integrated circuits; Photonic band gap; Semiconductor materials; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1987.23356
  • Filename
    1487067
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1119606