CMOS magnetic-field sensor system

Author

Sprotte, Andreas ; Buckhorst, Rolf ; Brockherde, Werner ; Hosticka, Bedrich J. ; Bosch, Dieter

Author_Institution

Fraunhofer-Inst. of Microelectron. Circuits & Syst., Duisberg, Germany

Volume

29

Issue

8

fYear

1994

fDate

8/1/1994 12:00:00 AM

Firstpage

1002

Lastpage

1005

Abstract

A magnetic-field sensor system integrated in CMOS technology with additional processing steps necessary for sensor fabrication is presented. The system contains a magnetoresistive permalloy microbridge acting as a sensor, temperature compensation circuitry, programmable readout electronics, reference voltage bias, and clock generation. It features maximum magnetic flux sensitivity of 70 mV/μT (corresponds to the magnetic-field sensitivity of 88.2 mV/(A/m) at μ_r=1) and its temperature gain is below 260 ppm/°C in the range between -50°C and +100°C

Keywords

CMOS integrated circuits; Permalloy; electric sensing devices; linear integrated circuits; magnetic field measurement; magnetoresistive devices; -50 to 100 degC; CMOS technology; clock generation; magnetic flux sensitivity; magnetic-field sensor system; magnetoresistive permalloy microbridge; programmable readout electronics; reference voltage bias; sensor fabrication; temperature compensation circuitry; temperature gain; CMOS process; CMOS technology; Fabrication; Integrated circuit technology; Magnetic circuits; Magnetic flux; Magnetic sensors; Magnetoresistance; Sensor systems; Temperature sensors;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.297713

Filename

297713