DocumentCode
1119889
Title
GaAs optoelectronic integrated receiver with high-output fast-response characteristics
Author
Hamaguchi, H. ; Makiuchi, M. ; Kumai, T. ; Wada, Osamu
Author_Institution
Fujitsu Laboratories Ltd., Atsugi, Japan
Volume
8
Issue
1
fYear
1987
fDate
1/1/1987 12:00:00 AM
Firstpage
39
Lastpage
41
Abstract
For obtaining high-output level and high-speed response in a GaAs-based optoelectronic integrated receiver, a circuit involving a two-stage amplifier was first designed and fabricated. A high sensitivity of 400 V/W has been achieved while preserving a high-speed response of 2-Gbit/s nonreturn to zero (NRZ).
Keywords
Broadband amplifiers; Capacitance; Circuits; Degradation; Gallium arsenide; Optical signal processing; Optoelectronic devices; Photodetectors; Photodiodes; Pulse amplifiers;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1987.26543
Filename
1487093
Link To Document