• DocumentCode
    1120573
  • Title

    Pd—SnOxMIS capacitor as a new type of O2gaseous sensor

  • Author

    Kang, W.P. ; Xu, J.F. ; Lalevic, B. ; Poteat, T.L.

  • Author_Institution
    Rutgers University, Piscataway, NJ
  • Volume
    8
  • Issue
    5
  • fYear
    1987
  • fDate
    5/1/1987 12:00:00 AM
  • Firstpage
    211
  • Lastpage
    213
  • Abstract
    Device characteristics of a new type of O2gaseous sensor are presented. These sensors are fabricated in the MIS configuration Pd-SnOx-Si3N4-SiO2-Si-Al with highly resistive SnOxas an oxygen adsorptive element. Partial pressures of O2below 0.1 torr can be detected at room temperature by these devices. Steady-state and transient behavior are described as a function of O2partial pressure and temperature. Adsorption and desorption rates and time constants are determined. Activation energy for O2adsorption in SnOxis found to be 1.6 K cal/ mole.
  • Keywords
    Capacitors; Conductivity; Gas detectors; Oxidation; Oxygen; Sensor phenomena and characterization; Silicon; Temperature sensors; Thin film sensors; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1987.26606
  • Filename
    1487156
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1120573