DocumentCode
1120769
Title
Wide-ratio broadband SiGe HBT regenerative frequency divider enhanced by differential TIA load
Author
Wei, H.-J. ; Meng, C. ; Chang, Y.-W.
Author_Institution
Nat. Chiao Tung Univ., Hsinchu
Volume
43
Issue
19
fYear
2007
Firstpage
1021
Lastpage
1022
Abstract
A regenerative frequency divider with a differential transimpedance amplifier (TIA) active load using 0.35 mum SiGe HBT technology is demonstrated. The differential TIA is beneficial for higher frequency and lower sensitivity operation, and the inductive peaking enhances the bandwidth of the output buffer. From the experimental results, the operating frequency ranges from 5 to 27 GHz (fmax/fmm =5.2) for a supply voltage of 5 V and core power consumption of 49.5 mW. The chip size is 0.86 x 0.822 mm.
Keywords
Ge-Si alloys; amplifiers; frequency dividers; heterojunction bipolar transistors; microwave bipolar transistors; SiGe; differential TIA; differential transimpedance amplifier; frequency 5 GHz to 27 GHz; output buffer; power 49.5 mW; regenerative frequency divider; size 0.35 mum; voltage 5 V; wide-ratio broadband HBT;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20071384
Filename
4302802
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