• DocumentCode
    1120883
  • Title

    GaAs MESFET´s fabricated on InP substrates

  • Author

    Asano, K. ; Kasahara, K. ; Itoh, Tomohiro

  • Author_Institution
    NEC Corporation, Kawasaki, Japan
  • Volume
    8
  • Issue
    7
  • fYear
    1987
  • fDate
    7/1/1987 12:00:00 AM
  • Firstpage
    289
  • Lastpage
    290
  • Abstract
    This paper reports the first successful MESFET fabrication in GaAs layers grown directly on InP substrates by molecular beam epitaxy (MBE). The fabricated GaAs MESFET´s exhibit good I-V curves with complete pinch-off and saturation characteristics. About 100-mS/ mm transconductance was obtained for a 1.2-µm gate length device.
  • Keywords
    Buffer layers; Epitaxial growth; Gallium arsenide; Indium phosphide; Integrated circuit technology; Lattices; MESFETs; Molecular beam epitaxial growth; Substrates; Temperature;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1987.26634
  • Filename
    1487184
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1120883