Electron tunneling into 1-2-3 HTSC thin films

Author

Geerk, J. ; Wang, R.L. ; Li, H.C. ; Linker, G. ; Meyer, O. ; Ratzel, F. ; Smithey, R. ; Keschtkar, H.

Author_Institution

Inst. fuer Nukleare Festkorperphys., Karlsruhe, Germany

Volume

27

Issue

2

fYear

1991

fDate

3/1/1991 12:00:00 AM

Firstpage

3085

Lastpage

3089

Abstract

Detailed tunneling measurements on thin-film planar tunnel junctions of the type RE₁Ba₂Cu₃O₇/native oxide/Pb (RE=Y, Eu, or Gd) are reported. The films were sputter deposited and chemically etched prior to the growth of the native oxide. The structural content of the gaplike structure in the I-V characteristic was investigated by taking dI /dV and d³I/dV³ traces. By analysis of the temperature dependence and temperature smearing, strong arguments could be provided for the fact that all the structures between ±50 mV measured at low temperature are due to density of states effects. On junctions prepared on 1-2-3 films with T_c depressed either by partial oxygen depletion or by alloying, it is found that the gaplike structure was weakened, but did not shift on the energy scale

Keywords

barium compounds; europium compounds; gadolinium compounds; high-temperature superconductors; superconducting junction devices; superconducting thin films; yttrium compounds; 1-2-3 HTSC thin films; I-V characteristic; d³I/dV³ curves; dI/dV curves; density of states effects; gaplike structure; high temperature superconductors; temperature dependence; temperature smearing; thin-film planar tunnel junctions; tunneling measurements; Alloying; Chemicals; Density measurement; Electrons; Sputter etching; Sputtering; Temperature dependence; Temperature measurement; Transistors; Tunneling;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.133864

Filename

133864