Modified class-F distributed amplifier

Author

Eccleston, Kimberley W.

Author_Institution

Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore

Volume

14

Issue

10

fYear

2004

Firstpage

481

Lastpage

483

Abstract

The class-F power amplifier is known for its high efficiency. The class-F single-ended dual-fed distributed amplifier integrates both class-F amplification and efficient power combining in the one circuit, without using additional n-way power combiners. In this letter the earlier reported circuit topology and design method is modified to account for drain parasitic reactances. A 1.8-GHz amplifier employing two packaged field effect transistors was designed and tested. The measured drain dc efficiency and corresponding output power with an input generator available power of 14 dBm was 71% and 22dBm, respectively.

Keywords

UHF amplifiers; distributed amplifiers; power combiners; 1.8 GHz; circuit topology; class-F distributed amplifier; drain parasitic reactances; dual-fed distributed amplifiers; field effect transistors; power combining; Circuit testing; Circuit topology; Design methodology; Distributed amplifiers; FETs; High power amplifiers; Packaging; Power combiners; Power generation; Power measurement; Class-F amplifiers; distributed amplifiers; dual-fed distributed amplifiers; power combining;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2004.834570

Filename

1339298