High-Speed E-Mode InAs QW MOSFETs With $\hbox {Al}_{2} \hbox {O}_{3}$ Insulator for Future RF Applications

We demonstrate Lg = 100 nm high-speed enhancement-mode (E-mode) InAs quantum-well MOSFETs with outstanding high-frequency and logic performance. These devices feature a 3-nm Al₂O₃ layer grown by atomic layer deposition. The MOSFETs with Lg = 100 nm exhibit VT= 0.2 V (E-mode), R_ON = 370 Ω·μm, S = 105 mV/dec, DIBL = 100 mV/V, and gm_max = 1720 μS/μm at V_DS = 0.5 V. They also have an excellent high-frequency response of fT = 248 GHz and f_max = 302 GHz at V_DS = 0.5 V , the highest fT and f_max in III-V MOSFETs ever reported.