Preparation of ${\rm CeO}_{2}/{\rm La}_{2}{\rm Zr}_{2}{\rm O}_{7}$ Buffer Layers on Textured Ni5W Substrates by Chemical Solution Deposition Method

CeO₂ caped La₂Zr₂O₇ (LZO) buffer layers on cube-textured Ni5W substrates were fabricated by the method of chemical solution deposition(CSD). The orientation of both LZO film and CeO₂/LZO buffer layer was investigated using conventional XRD and X-ray four circle diffractometers, respectively. The results reveal that both the LZO film on Ni5W substrates and CeO₂ film on LZO buffer layer are grown epitaxially. The value of Full Width at Half Maximum (FWHM) of (111) Phi scan of CeO₂/LZO buffer layer is around 8^deg, and the FWHM of (200) omega-scan of CeO₂/La₂Zr₂O₇ buffer layer is 6.5^deg, indicating a good in-plan orientation of the as obtained buffer layers. It was observed by the high resolution SEM that the surface of LZO buffer layer is crack-free and very dense. The surface result observed by AFM indicates a very smooth CeO₂ surface with 5.9 nm of the root mean square roughness measured in an areas of 30 times 30 mum². AES depth profile results of CeO₂/LZO buffer layers shows that the deposited LZO film could effectively prevent the diffusion of Ni into the buffer layer.