• DocumentCode
    1124244
  • Title

    Enhancement-mode In0.52Al0.48As/In0.53Ga0.47As/InP HEMT utilising Ir/Ti/Pt/Au gate

  • Author

    Kim, S. ; Adesida, I. ; Jang, J.H.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Illinois, Urbana, IL, USA
  • Volume
    41
  • Issue
    15
  • fYear
    2005
  • fDate
    7/21/2005 12:00:00 AM
  • Firstpage
    871
  • Lastpage
    872
  • Abstract
    InAlAs/InGaAs/InP enhancement-mode high electron mobility transistors utilising Ir/Ti/Pt/Au gates have been fabricated and compared to devices with conventional Pt/Ti/Pt/Au gates. Enhancement-mode operation with threshold voltage of 134 mV was achieved for Ir-based devices with 0.25 μm gate length after a short anneal at 250°C. No change was observed in the magnitude of gm before and after anneal, indicating low metal diffusivity and high thermal stability for Ir-based devices.
  • Keywords
    III-V semiconductors; aluminium compounds; annealing; gallium arsenide; gold; high electron mobility transistors; indium compounds; iridium; platinum; titanium; 0.25 micron; 134 mV; 250 C; In0.52Al0.48As-In0.53Ga0.47As-InP; Ir-Ti-Pt-Au; enhancement-mode operation; high electron mobility transistors; metal diffusivity; thermal stability;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20051504
  • Filename
    1487758
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1124244