• DocumentCode
    1124275
  • Title

    Properties of graphene produced by the high pressure-high temperature growth process

  • Author

    Parvizi, F. ; Teweldebrhan, D. ; Ghosh, S. ; Calizo, I. ; Balandin, A.A. ; Zhu, H. ; Abbaschian, R.

  • Author_Institution
    Dept. of Electr. Eng., Univ. of California Riverside, Riverside, CA
  • Volume
    3
  • Issue
    1
  • fYear
    2008
  • fDate
    3/1/2008 12:00:00 AM
  • Firstpage
    29
  • Lastpage
    34
  • Abstract
    The authors report on a new method for the synthesis of graphene, a mono-layer of carbon atoms arranged in a honey comb lattice, and the assessment of the properties of obtained graphene layers using micro-Raman characterisation. Graphene was produced by a high pressure-high temperature (HPHT) growth process from the natural graphitic source material by utilising the molten Fe-Ni catalysts for dissolution of carbon. The resulting large-area graphene flakes were transferred to the silicon-silicon oxide substrates for the spectroscopic micro-Raman and scanning electron microscopy inspection. The analysis of the G peak, D, T + D and 2D bands in the Raman spectra under the 488 nm laser excitation indicate that the HPHT technique is capable of producing high-quality large-area single-layer graphene with a low defect density. The disorder-induced D peak ~1359 cm-1 while very strong in the initial graphitic material is completely absent in the graphene layers. The proposed method may lead to a more reliable graphene synthesis and facilitate its purification and chemical doping.
  • Keywords
    Raman spectra; carbon; high-pressure effects; high-temperature effects; honeycomb structures; materials preparation; monolayers; scanning electron microscopy; C; G peak; Raman spectra; carbon atoms; carbon dissolution; disorder-induced D peak; graphene; high pressure-high temperature growth process; honeycomb lattice; initial graphitic material; micro-Raman characterisation; molten Fe-Ni catalysts; monolayer; scanning electron microscopy; silicon-silicon oxide substrates; wavelength 488 nm;
  • fLanguage
    English
  • Journal_Title
    Micro & Nano Letters, IET
  • Publisher
    iet
  • ISSN
    1750-0443
  • Type

    jour

  • DOI
    10.1049/mnl:20070074
  • Filename
    4483852