Stress-induced electromigration backflow effect in copper interconnects

Author

Ney, David ; Federspiel, Xavier ; Girault, Valerie ; Thomas, Olivier ; Gergaud, Patrice

Author_Institution

Central R&D Lab., Crolles

Volume

6

Issue

2

fYear

2006

fDate

6/1/2006 12:00:00 AM

Firstpage

175

Lastpage

180

Abstract

The electromigration threshold in copper interconnect is reported in this paper. The critical product (jL)_c is first determined for copper oxide interconnects with temperature ranging from 250degC to 350degC from package-level experiments. It is shown that the product does not significantly change in this temperature range. Then, (jL)_c was extracted for copper low-k dielectric (k=2.8) interconnects at 350degC. A larger value than that for oxide dielectric was found. Finally, a correlation between the n values from Black´s model and with jL conditions was established for both dielectrics

Keywords

copper; dielectric materials; electromigration; integrated circuit interconnections; integrated circuit reliability; stress effects; 250 to 350 C; Black model; Blech effect; Cu; copper interconnects; copper oxide interconnects; critical product; oxide dielectric; stress-induced electromigration backflow effect; Copper; Current density; Dielectrics; Electromigration; Failure analysis; Integrated circuit interconnections; Integrated circuit reliability; Manufacturing; Stress; Temperature distribution; Black´s model; Blech effect; copper; electromigration (EM); interconnect; lifetime extrapolation; threshold product;

fLanguage

English

Journal_Title

Device and Materials Reliability, IEEE Transactions on

Publisher

ieee

ISSN

1530-4388

Type

jour

DOI

10.1109/TDMR.2006.877862

Filename

1673706