DocumentCode
1125920
Title
Ridge-Type Semiconductor Lasers With Antiguiding Cladding Layers for Horizontal Transverse Modes
Author
Takada, Hiroo ; Numai, Takahiro
Author_Institution
Dept. of Electr. & Electron. Eng., Ritsumeikan Univ., Kusatsu, Japan
Volume
45
Issue
8
fYear
2009
Firstpage
927
Lastpage
931
Abstract
To suppress lasing in higher order transverse modes and improve kink levels in ridge-type 980-nm fiber pump semiconductor lasers, a novel ridge structure with antiguiding cladding layers for horizontal transverse modes is proposed, and lasing characteristics are theoretically analyzed. In the proposed ridge structure, kink levels are improved by suppressing spatial hole burning and lowering optical gains for higher order transverse modes, with an increase in the step d of the antiguiding cladding layers, which are located at both sides of a mesa. For 100 nmles d les 230 nm, kink-free laser operation is obtained up to the injected current of 2 A.
Keywords
laser beams; laser modes; optical hole burning; optical pumping; semiconductor lasers; antiguiding cladding layer; current 2 A; fiber pumping; horizontal transverse mode; kink-free laser operation; lasing characteristics; ridge-type semiconductor laser; spatial hole burning; wavelength 980 nm; Erbium-doped fiber lasers; Laser excitation; Laser modes; Optical fiber communication; Optical pumping; Optical refraction; Optical variables control; Power generation; Pump lasers; Semiconductor lasers; Kink; ridge structure; semiconductor lasers; transverse mode;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.2009.2016439
Filename
5153574
Link To Document