DocumentCode
1126046
Title
Electrooptic junction modulators
Author
Oldham, William G. ; Bahraman, Ali
Author_Institution
University of California, Berkeley, CA, USA
Volume
3
Issue
7
fYear
1967
fDate
7/1/1967 12:00:00 AM
Firstpage
278
Lastpage
286
Abstract
The use of 
junctions, 
junctions, metal semiconductor junctions, and heterojunctions as phase modulators is considered. The allowed modes of propagation through such junctions formed in both isotropic and uniaxial crystals are derived. The dependence of the propagation constant on the electric field is explicitly derived to yield the phase modulation properties of each structure, and the various structures are compared as high-frequency modulators. Heterojunction and junction modulators are found to be superior to junction modulators. Metal semiconductor junctions are found to be too lossy in the visible, but become attractive in the infrared.
junctions, junctions, metal semiconductor junctions, and heterojunctions as phase modulators is considered. The allowed modes of propagation through such junctions formed in both isotropic and uniaxial crystals are derived. The dependence of the propagation constant on the electric field is explicitly derived to yield the phase modulation properties of each structure, and the various structures are compared as high-frequency modulators. Heterojunction and junction modulators are found to be superior to junction modulators. Metal semiconductor junctions are found to be too lossy in the visible, but become attractive in the infrared.Keywords
Crystals; Electromagnetic wave absorption; Electrooptic modulators; Microwave theory and techniques; Optical modulation; P-n junctions; PIN photodiodes; Paramagnetic materials; Paramagnetic resonance; Phase modulation;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1967.1074597
Filename
1074597
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