Constant Excess Bias Control for Single-Photon Avalanche Diode Using Real-Time Breakdown Monitoring

Author

Po-Hsuan Chang ; Chia-Ming Tsai ; Jau-Yang Wu ; Sheng-Di Lin ; Ming-Ching Kuo

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

36

Issue

8

fYear

2015

fDate

Aug. 2015

Firstpage

859

Lastpage

861

Abstract

A monolithic constant excess bias control circuit for single-photon avalanche diode (SPAD) in standard 0.18-μm CMOS technology is reported. The proposed real-time breakdown monitoring technique is incorporated into a passive-quenching-active-reset circuit. A sample-and-hold circuit samples the breakdown level of SPAD through well-defined sampling phase. Following the sample-and-hold circuit, the level shifter with voltage shifting defined by predetermined excess bias provides the reset voltage of SPAD. The design operates the SPAD under constant excess bias and effectively mitigates the impact of the process-voltage-temperature variation by maintaining the optimal excess bias condition.

Keywords

CMOS integrated circuits; avalanche breakdown; avalanche photodiodes; integrated optoelectronics; sample and hold circuits; SPAD; breakdown level; level shifter; monolithic constant excess bias control; optimal excess bias condition; passive-quenching-active-reset circuit; process voltage temperature variation; real-time breakdown monitoring; sample-and-hold circuit samples; single-photon avalanche diode; size 0.18 mum; standard CMOS technology; voltage shifting; CMOS integrated circuits; CMOS technology; Cathodes; Electric breakdown; Monitoring; Semiconductor device measurement; Voltage measurement; Single-photon; avalanche; breakdown; diode; single-photon; single-photon avalanche diode;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2015.2450936

Filename

7138576