Projected Performance of Heterostructure Tunneling FETs in Low Power Microwave and mm-Wave Applications

Author

Asbeck, Peter M. ; Kangmu Lee ; Jie Min

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of California at San Diego, La Jolla, CA, USA

Volume

3

Issue

3

fYear

2015

fDate

May-15

Firstpage

122

Lastpage

134

Abstract

Characteristics of heterostructure tunneling FETs (HTFETs) at microwave and mm-wave frequencies are reviewed, and their simulated performance in a variety of prototype circuits is presented. The results illustrate that HTFETs provide substantial benefits in low power, high frequency circuits, related to their high nonlinearity at low voltages (critical to rectifiers and mixers), as well as to their high transconductance and gain at low current and low power levels. Parasitic capacitance and noise models of HTFETs are summarized. mm-wave low noise amplifiers, oscillators, and mixers with simulated operation at power levels below 1 mW are described. High responsivity passive mm-wave detectors which could provide noise-equivalent temperature differences below 1 °C are presented.

Keywords

high electron mobility transistors; low noise amplifiers; low-power electronics; millimetre wave amplifiers; millimetre wave mixers; millimetre wave oscillators; rectifiers; tunnel transistors; HTFET; heterostructure tunneling FET; high frequency circuits; low power microwave applications; mm-wave applications; mm-wave low noise amplifiers; mm-wave mixers; mm-wave oscillators; noise models; parasitic capacitance; passive mm-wave detectors; rectifiers; Capacitance; Integrated circuit modeling; Logic gates; MOSFET; Noise; Silicon; Tunneling FETs; low noise amplifiers; low power electronics; mm-wave detectors; noise in tunneling devices; voltage-controlled oscillators;

fLanguage

English

Journal_Title

Electron Devices Society, IEEE Journal of the

Publisher

ieee

ISSN

2168-6734

Type

jour

DOI

10.1109/JEDS.2015.2416320

Filename

7066931