• DocumentCode
    1126937
  • Title

    Enhancement-Mode Metamorphic HEMT on GaAs Substrate With 2 S/mm g_{m} and 490 GHz f_{T}

  • Author

    Ha, Wonill ; Shinohara, K. ; Brar, B.

  • Author_Institution
    LLC, Thousand Oaks
  • Volume
    29
  • Issue
    5
  • fYear
    2008
  • fDate
    5/1/2008 12:00:00 AM
  • Firstpage
    419
  • Lastpage
    421
  • Abstract
    This letter presents the results of an enhancement mode metamorphic high-electron-mobility transistor device on a GaAs substrate with a 70% indium composition channel. A 35-nm gate length device exhibits a 490-GHz current gain cutoff frequency (fT), a transconductance (gm) of 2 S/mm, a threshold voltage (Vth) of 0.11 V (enhancement mode) and a low on- resistance of 0.37 Omega mm. These attributes make the device well- suited for millimeter-wave circuit applications.
  • Keywords
    gallium arsenide; high electron mobility transistors; millimetre wave circuits; composition channel; frequency 490 GHz; metamorphic HEMT; millimeter-wave circuit; Enhancement-mode transistors; Pt-gate; T-gate; high transconductance; high-electron-mobility transistors (HEMTs); metamorphic; metamorphic HEMTs (mHEMTs);
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2008.920283
  • Filename
    4485010
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1126937