• DocumentCode
    1126976
  • Title

    Analysis and Compensation of Phase Variations Versus Gain in Amplifiers Verified by SiGe HBT Cascode RFIC

  • Author

    Ellinger, Frank ; Jorges, U. ; Mayer, Uwe ; Eickhoff, Ralf

  • Author_Institution
    Dept. of Circuit Design & Network Theor., Dresden Univ. of Technol., Dresden, Germany
  • Volume
    57
  • Issue
    8
  • fYear
    2009
  • Firstpage
    1885
  • Lastpage
    1894
  • Abstract
    The transmission phase variations versus gain in common emitter and common base amplifiers are analyzed revealing that these stages can be tuned to yield opposite phase characteristics versus gain. By cascading these two stages, e.g., on the basis of a cascode, and optimizing added feedback elements, it is possible to compensate these phase variations. A universal analysis based on bipolar transistors is derived. However, the insights can be mapped to other transistors such as field-effect transistors. The analysis is verified by implementation of a low-noise cascode amplifier in 0.25-mum silicon germanium heterojunction bipolar transistors. At 50-Omega terminations, 1.6-V supply voltage, 1-mA current consumption, and a gain of 7 dB plusmn 0.25 dB, a noise figure of less than 3.2 dB, and a third-order output intercept point of -3 dBm are measured within a frequency range from 5.2 to 5.9 GHz. For a gain control range of 12 and 20 dB, the transmission phase variations are reduced to 3deg and 6deg, respectively, which is around a factor of 7 better than for a conventional noncompensated cascode topology. The fully integrated circuit is well suited for wireless local area network systems applying adaptive antenna combining and operating in accordance to the 802.11 a/n standards.
  • Keywords
    Ge-Si alloys; field effect MMIC; heterojunction bipolar transistors; low noise amplifiers; microwave amplifiers; wide band gap semiconductors; HBT cascode RFIC; SiGe; adaptive antenna combining; amplifiers; bipolar transistor; common base amplifier; current 1 mA; current consumption; emitter base amplifier; field-effect transistor; frequency 5.2 GHz to 5.9 GHz; gain 7 dB; gain variation; heterojunction bipolar transistor; integrated circuit; low-noise cascode amplifier; noncompensated cascode topology; resistance 50 ohm; size 0.25 mum; third-order output intercept point; transmission phase variation; universal analysis; voltage 1.6 V; wireless local area network system; 802.11a/n; $C$-band; Adaptive antenna combining (AAC); BiCMOS; cascode; heterojunction bipolar transistor (HBT); transmission phase; variable gain amplifier (VGA); wireless local area nework (WLAN);
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/TMTT.2009.2025415
  • Filename
    5156287