DocumentCode
1127820
Title
Current-induced light emission from a porous silicon device
Author
Richter, Axel ; Steiner ; Kozlowski, F. ; Lang, W.
Author_Institution
Fraunhofer Inst. for Solid State Technol., Munich, Germany
Volume
12
Issue
12
fYear
1991
Firstpage
691
Lastpage
692
Abstract
Experiments with light-emitting porous silicon (LEPOS) are described. The porous silicon was made from n-type silicon by anodization in an electrolytic cell by HF with an applied electrical current. Visible light emission was achieved by irradiation with ultraviolet light. Visible electroluminescence (EL) was achieved by applying a DC or AC voltage to a solid-state contact on top of the porous layer. Optical spectra from both experiments are shown.<>
Keywords
anodised layers; electroluminescence; elemental semiconductors; fluorescence; light emitting devices; luminescence of inorganic solids; silicon; HF acid; LEPOS; UV irradiation; anodization; current induced light emission; electrolytic cell; light emitting porous Si; n-type Si; porous Si surface; visible electroluminescence; visible light emission; Contacts; Electroluminescence; Gold; Hafnium; Optical films; Radiative recombination; Semiconductor films; Silicon devices; Solid state circuits; Stimulated emission;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.116957
Filename
116957
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