P and B doped Si resonant interband tunnel diodes with as-grown negative differential resistance

Author

Thompson, P.E. ; Jernigan, G.G. ; Park, S.-Y. ; Yu, Rong ; Anisha, R. ; Berger, P.R. ; Pawlik, David ; Krom, Raymond ; Rommel, Sean L.

Author_Institution

Naval Res. Lab., Washington, DC

Volume

45

Issue

14

fYear

2009

Firstpage

759

Lastpage

761

Abstract

Robust Si resonant interband tunnel diodes have been designed and tested that demonstrate as-grown negative differential resistance at room temperature with peak-to-valley current ratios (PVCR) up to 2.5 and peak current densities in the order of 1 kA/cm². The as-grown Si p⁺in⁺ structures were synthesised using solid source molecular beam epitaxy, incorporating B and P delta-doped layers. Both structures have shown thermal stability after 1 min post-growth anneals up through 675degC and the PVCR improves to 2.8 for a 575degC 1 min anneal.

Keywords

annealing; boron; current density; elemental semiconductors; phosphorus; resonant tunnelling diodes; semiconductor doping; semiconductor epitaxial layers; silicon; thermal stability; PVCR; Si:B; Si:P; annealing; as-grown negative differential resistance; current density; delta-doped layer; p⁺in⁺ structure; peak-valley current ratio; robust silicon resonant interband tunnel diode; solid source molecular beam epitaxy; temperature 293 K to 298 K; temperature 575 degC; temperature 675 degC; thermal stability; time 1 min;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el.2009.1007

Filename

5159731