DocumentCode
1133720
Title
Modeling ferroelectric capacitors for memory applications
Author
Du, Xiao-Hong ; Sheu, Bing
Author_Institution
Ramtron Int. Corp., Colorado Springs, CO, USA
Volume
18
Issue
6
fYear
2002
fDate
11/1/2002 12:00:00 AM
Firstpage
10
Lastpage
16
Abstract
The ferroelectric capacitor model is the foundation for accurate simulation of ferroelectric hysteresis loops and minor loops, transitions between the loops under arbitrary voltage patterns, transient responses of ferroelectric capacitors to short voltage pulses with widths in the nano-second range, and temperature behaviors of ferroelectric capacitors. The simulation speed is the same as that for a typical nonlinear capacitor. To the circuit designers, a ferroelectric capacitor is represented as a two-port device like a capacitor. The parameters are extracted easily and reliably by curve fitting the measured hysteresis loops. The model is applicable to fast circuit simulations for large ferroelectric memory designs.
Keywords
dielectric hysteresis; ferroelectric capacitors; ferroelectric storage; transient response; two-port networks; arbitrary voltage patterns; capacitor model; ferroelectric capacitors; ferroelectric hysteresis loops; memory applications; minor loops; nonlinear capacitor; short voltage pulses; simulation speed; temperature behaviors; transient responses; two-port device; Capacitors; EPROM; Ferroelectric films; Ferroelectric materials; Flash memory; Hysteresis; Nonvolatile memory; Polarization; Random access memory; Voltage;
fLanguage
English
Journal_Title
Circuits and Devices Magazine, IEEE
Publisher
ieee
ISSN
8755-3996
Type
jour
DOI
10.1109/MCD.2002.1175755
Filename
1175755
Link To Document