• DocumentCode
    1133720
  • Title

    Modeling ferroelectric capacitors for memory applications

  • Author

    Du, Xiao-Hong ; Sheu, Bing

  • Author_Institution
    Ramtron Int. Corp., Colorado Springs, CO, USA
  • Volume
    18
  • Issue
    6
  • fYear
    2002
  • fDate
    11/1/2002 12:00:00 AM
  • Firstpage
    10
  • Lastpage
    16
  • Abstract
    The ferroelectric capacitor model is the foundation for accurate simulation of ferroelectric hysteresis loops and minor loops, transitions between the loops under arbitrary voltage patterns, transient responses of ferroelectric capacitors to short voltage pulses with widths in the nano-second range, and temperature behaviors of ferroelectric capacitors. The simulation speed is the same as that for a typical nonlinear capacitor. To the circuit designers, a ferroelectric capacitor is represented as a two-port device like a capacitor. The parameters are extracted easily and reliably by curve fitting the measured hysteresis loops. The model is applicable to fast circuit simulations for large ferroelectric memory designs.
  • Keywords
    dielectric hysteresis; ferroelectric capacitors; ferroelectric storage; transient response; two-port networks; arbitrary voltage patterns; capacitor model; ferroelectric capacitors; ferroelectric hysteresis loops; memory applications; minor loops; nonlinear capacitor; short voltage pulses; simulation speed; temperature behaviors; transient responses; two-port device; Capacitors; EPROM; Ferroelectric films; Ferroelectric materials; Flash memory; Hysteresis; Nonvolatile memory; Polarization; Random access memory; Voltage;
  • fLanguage
    English
  • Journal_Title
    Circuits and Devices Magazine, IEEE
  • Publisher
    ieee
  • ISSN
    8755-3996
  • Type

    jour

  • DOI
    10.1109/MCD.2002.1175755
  • Filename
    1175755