Linear array of Si-Ge heterojunction photodetectors monolithically integrated with silicon CMOS readout electronics

Author

Masini, Gianlorenzo ; Cencelli, Valentino ; Colace, Lorenzo ; De Notaristefani, Francesco ; Assanto, Gaetano

Author_Institution

Nonlinear Opt. & Optoelectron. Lab., Univ. Roma Tre, Rome, Italy

Volume

10

Issue

4

fYear

2004

Firstpage

811

Lastpage

815

Abstract

We describe a linear array of Ge-Si heterojunction photodiodes monolithically integrated on a complementary metal-oxide-semiconductor (CMOS) integrated circuit for detection and imaging in the near infrared. Detectors are realized by thermal evaporation of Ge films at the end of the standard CMOS process on substrates held at low temperature (300°C). Each of the 64 detectors is connected to a front-end stage for photocurrent integration and analog-to-digital conversion.

Keywords

CMOS integrated circuits; Ge-Si alloys; arrays; elemental semiconductors; infrared detectors; infrared imaging; monolithic integrated circuits; photodetectors; readout electronics; 300 degC; Ge-Si; Si-Ge heterojunction photodetectors linear array; analog-to-digital conversion; complementary metal-oxide-semiconductor integrated circuit; near infrared detection; near infrared imaging; photocurrent integration; photodiodes; silicon CMOS readout electronics; thermal film evaporation; CMOS integrated circuits; Heterojunctions; Infrared detectors; Infrared imaging; Monolithic integrated circuits; Optical imaging; Photodetectors; Photodiodes; Readout electronics; Silicon; Germanium-on-silicon; NIR; monolithic integration; near-infrared; photodetectors;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2004.833970

Filename

1343968