DocumentCode
1134823
Title
Effect of crystallinity and thickness on the diffusion barrier behavior of electroless nickel deposit between Cu and solder
Author
Lin, Kwang-Lung ; Hwang, Jia-Wei
Author_Institution
Dept. of Mater. Sci. & Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Volume
25
Issue
4
fYear
2002
fDate
11/1/2002 12:00:00 AM
Firstpage
509
Lastpage
513
Abstract
The crystallinity of electroless nickel deposit was manipulated by applying bath stabilizer including lead acetate and thiourea. A crystalline deposit and a higher deposition rate of electroless nickel were achieved with thiourea than with lead acetate. The effect of crystallinity on the diffusion barrier performance of the electroless nickel deposit was studied between solder and Cu deposit. The thickness of the electroless nickel deposit investigated includes 1, 3, and 5 μm. It was found that both crystalline and amorphous deposits perform similarly in barrier performance except when the thickness of the deposit is as thin as 1 μm. Cross sectional elemental analysis results indicate that a 3 μm thickness deposit can withstand ten times of reflow without counter diffusion between Sn and Cu, although Ni-Sn intermetallic compounds were formed. The 3 μm thickness is also adequate for barrier function after 1000 hours of aging at 150°C.
Keywords
X-ray diffraction; ageing; copper; diffusion barriers; electroless deposited coatings; flip-chip devices; nickel; reflow soldering; 1 to 5 micron; 1000 hour; 150 degC; Cu; Cu-Ni-SnPb; Ni-Sn; Ni-Sn intermetallic compound formation; aging; amorphous deposit; bath stabilizer; cross sectional elemental analysis; crystalline deposit; crystallinity; deposition rate; diffusion barrier behavior; electroless Ni deposit; flip chip solder bump; lead acetate; reflow; solder; thickness; thiourea; Amorphous materials; Conductors; Crystallization; Electrodes; Flip chip; Hydrogen; Intermetallic; Lead; Nickel; Tin;
fLanguage
English
Journal_Title
Advanced Packaging, IEEE Transactions on
Publisher
ieee
ISSN
1521-3323
Type
jour
DOI
10.1109/TADVP.2002.807606
Filename
1176477
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