• DocumentCode
    1134823
  • Title

    Effect of crystallinity and thickness on the diffusion barrier behavior of electroless nickel deposit between Cu and solder

  • Author

    Lin, Kwang-Lung ; Hwang, Jia-Wei

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
  • Volume
    25
  • Issue
    4
  • fYear
    2002
  • fDate
    11/1/2002 12:00:00 AM
  • Firstpage
    509
  • Lastpage
    513
  • Abstract
    The crystallinity of electroless nickel deposit was manipulated by applying bath stabilizer including lead acetate and thiourea. A crystalline deposit and a higher deposition rate of electroless nickel were achieved with thiourea than with lead acetate. The effect of crystallinity on the diffusion barrier performance of the electroless nickel deposit was studied between solder and Cu deposit. The thickness of the electroless nickel deposit investigated includes 1, 3, and 5 μm. It was found that both crystalline and amorphous deposits perform similarly in barrier performance except when the thickness of the deposit is as thin as 1 μm. Cross sectional elemental analysis results indicate that a 3 μm thickness deposit can withstand ten times of reflow without counter diffusion between Sn and Cu, although Ni-Sn intermetallic compounds were formed. The 3 μm thickness is also adequate for barrier function after 1000 hours of aging at 150°C.
  • Keywords
    X-ray diffraction; ageing; copper; diffusion barriers; electroless deposited coatings; flip-chip devices; nickel; reflow soldering; 1 to 5 micron; 1000 hour; 150 degC; Cu; Cu-Ni-SnPb; Ni-Sn; Ni-Sn intermetallic compound formation; aging; amorphous deposit; bath stabilizer; cross sectional elemental analysis; crystalline deposit; crystallinity; deposition rate; diffusion barrier behavior; electroless Ni deposit; flip chip solder bump; lead acetate; reflow; solder; thickness; thiourea; Amorphous materials; Conductors; Crystallization; Electrodes; Flip chip; Hydrogen; Intermetallic; Lead; Nickel; Tin;
  • fLanguage
    English
  • Journal_Title
    Advanced Packaging, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1521-3323
  • Type

    jour

  • DOI
    10.1109/TADVP.2002.807606
  • Filename
    1176477