• DocumentCode
    1135913
  • Title

    Currents and charge profiles in electron beam irradiated samples under an applied voltage: exact numerical calculation and Sessler´s conductivity approximation

  • Author

    Ferreira, G.F.Leal ; de Figueiredo, M.T.

  • Author_Institution
    Inst. de Fisica de Sao Carlos, Univ. de Sao Paulo, Sao Carlos, Brazil
  • Volume
    10
  • Issue
    1
  • fYear
    2003
  • Firstpage
    137
  • Lastpage
    147
  • Abstract
    In this paper the Sessler´s treatment (ST) for radiation induced conductivity in open circuit, in which the material under electron beam irradiation is supposed to acquire a conductivity and to accumulate mobile as well as trapped charges, is applied to the case of irradiation under a voltage. We show that ST is an approximation of a more complex treatment where the generation-recombination process is explicitly considered while allowing a single species to move. ST leads to good results for the back electrode current and for charge profiles if the electric field is so directed as to drive the mobile charges into the sample bulk. In general, trapping causes the agreement to be worse. An implicit finite difference scheme was employed in the numerical integration to ensure greater accuracy.
  • Keywords
    EBIC; electric charge; electron traps; electron-hole recombination; finite difference methods; hole traps; integration; Sessler´s conductivity approximation; Sessler´s treatment; back electrode current; charge profiles; conductivity; currents; electron beam irradiated samples; exact numerical calculation; generation-recombination process; implicit finite difference scheme; mobile charge; numerical integration; radiation induced conductivity; trapped charge; Circuits; Conductivity; Electrodes; Electron beams; Electron traps; Optical pulse generation; Pulse modulation; Pulsed electroacoustic methods; Spontaneous emission; Voltage;
  • fLanguage
    English
  • Journal_Title
    Dielectrics and Electrical Insulation, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1070-9878
  • Type

    jour

  • DOI
    10.1109/TDEI.2003.1176577
  • Filename
    1176577