Circuit-Level Implementation of Semiconductor Self-Assembled Quantum Dot Laser

Author

Yavari, Mohammad Hasan ; Ahmadi, Vahid

Author_Institution

Dept. of Electr. Eng., Tarbiat Modares Univ., Tehran

Volume

15

Issue

3

fYear

2009

Firstpage

774

Lastpage

779

Abstract

In this paper, for the first time, we present a circuit model of InGaAs-GaAs self-assembled quantum dot (QD) lasers (SAQDLs) based on the standard rate equations. By using the presented model, effects of carrier dynamics on QD laser static and dynamic performances are investigated. Simulated results show that retarded carrier relaxation due to phonon bottleneck degrades the threshold current, external quantum efficiency, and modulation response of QD laser, which is in agreement with the results reported by other researchers. The model accurately explains the operating characteristics found in InGaAs-GaAs SAQDLs.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser beams; optical modulation; quantum dot lasers; quantum optics; self-assembly; InGaAs-GaAs; QD laser statics; carrier dynamics effect; circuit-level implementation; laser dynamic performance; optical modulation; phonon bottleneck degradation; semiconductor self-assembled quantum dot laser; standard rate equation; Circuit model; InGaAs–GaAs; modulation response; phonon bottleneck; self-assembled quantum dot laser (SAQDL);

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2008.2011997

Filename

4770208