• DocumentCode
    1136082
  • Title

    Nitride-Based Asymmetric Two-Step Light-Emitting Diode With In _{0.08} Ga _{0.92} N Shallow Ste

  • Author

    Kuo, Cheng-Huang ; Fu, Y.K. ; Yeh, C.L. ; Tun, C.J. ; Chen, P.H. ; Lai, Wei-Chih ; Chang, Shoou-Jinn

  • Author_Institution
    Dept. of Opt. & Photonics, Nat. Central Univ., Jhongli
  • Volume
    21
  • Issue
    6
  • fYear
    2009
  • fDate
    3/15/2009 12:00:00 AM
  • Firstpage
    371
  • Lastpage
    373
  • Abstract
    A nitride-based asymmetric two-step light-emitting diode (LED) with In0.08 Ga0.92N shallow step was proposed and fabricated. It was found that the low indium content In0.08 Ga0.92N layer can significantly enhance phase separation and/or inhomogeneous indium distribution in the active In0.27Ga0.73N layer. It was also found that we can enhance LED output power by a factor of 2.27 by simply inserting an In0.08 Ga0.92N shallow step.
  • Keywords
    III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; phase separation; wide band gap semiconductors; InGaN-GaN; light-emitting diodes; phase separation; single quantum well; InGaN–GaN; light-emitting diode (LED); low indium composition; single-quantum-well (SQW);
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2008.2012118
  • Filename
    4770213
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1136082