DocumentCode
1136191
Title
Resonant modes of GaAs junction lasers
Author
Zachos, Thomas H. ; Ripper, José E.
Author_Institution
Bell Telephone Lab., Murray Hills, NJ, USA
Volume
5
Issue
1
fYear
1969
fDate
1/1/1969 12:00:00 AM
Firstpage
29
Lastpage
37
Abstract
The resonant modes of GaAs junction lasers are obtained from a proposed model and compared with experimental results. Theoretical results are based on an assumed laser medium whose dielectric constant varies both along and perpendicular to the junction plane. The frequency separations of the transverse modes are found to be in very good agreement with presented high-resolution spectral measurements of stripe-geometry laser radiation. Furthermore, the theoretical field distributions are also in good agreement with observed transverse field variations reported previously. The laser output spectrum usually shows a number of "satellites" located adjacent to each longitudinal (Fabry-Perot) resonance. It is shown that each satellite represents the frequency of a transverse resonance having a different mode number along the junction plane and a corresponding Hermite-Gaussian intensity profile along the plane. Theory shows that the frequency separation of two adjacent satellites is related to the falloff rate of the dielectric constant along the junction plane. This focusing is measured from the intensity profile of a far-field pattern. From this information, the theoretical frequency separation is calculated and found to agree well with the measured separation of 6.4 GHz (0.15 Å).
Keywords
Electromagnetic fields; Electromagnetic radiation; Frequency measurement; Gallium arsenide; Laser modes; Laser theory; Mirrors; Resonance; Satellites; Semiconductor lasers;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1969.1075669
Filename
1075669
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