• DocumentCode
    1136191
  • Title

    Resonant modes of GaAs junction lasers

  • Author

    Zachos, Thomas H. ; Ripper, José E.

  • Author_Institution
    Bell Telephone Lab., Murray Hills, NJ, USA
  • Volume
    5
  • Issue
    1
  • fYear
    1969
  • fDate
    1/1/1969 12:00:00 AM
  • Firstpage
    29
  • Lastpage
    37
  • Abstract
    The resonant modes of GaAs junction lasers are obtained from a proposed model and compared with experimental results. Theoretical results are based on an assumed laser medium whose dielectric constant varies both along and perpendicular to the junction plane. The frequency separations of the transverse modes are found to be in very good agreement with presented high-resolution spectral measurements of stripe-geometry laser radiation. Furthermore, the theoretical field distributions are also in good agreement with observed transverse field variations reported previously. The laser output spectrum usually shows a number of "satellites" located adjacent to each longitudinal (Fabry-Perot) resonance. It is shown that each satellite represents the frequency of a transverse resonance having a different mode number along the junction plane and a corresponding Hermite-Gaussian intensity profile along the plane. Theory shows that the frequency separation of two adjacent satellites is related to the falloff rate of the dielectric constant along the junction plane. This focusing is measured from the intensity profile of a far-field pattern. From this information, the theoretical frequency separation is calculated and found to agree well with the measured separation of 6.4 GHz (0.15 Å).
  • Keywords
    Electromagnetic fields; Electromagnetic radiation; Frequency measurement; Gallium arsenide; Laser modes; Laser theory; Mirrors; Resonance; Satellites; Semiconductor lasers;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1969.1075669
  • Filename
    1075669