Modeling of quantum effects for ultrathin oxide MOS structures with an effective potential

Author

Li, Yiming ; Tang, Ting-wei ; Wang, Xinlin

Author_Institution

Nat. Nano Device Labs., Hsinchu, Taiwan

Volume

1

Issue

4

fYear

2002

fDate

12/1/2002 12:00:00 AM

Firstpage

238

Lastpage

242

Abstract

In this paper, the effectiveness of the effective potential (EP) method for modeling quantum effects in ultrathin oxide MOS structures is investigated. The inversion-layer charge density and MOS capacitance in one-dimensional MOS structures are simulated with various substrate doping profiles and gate bias voltages. The effective mass is used as an adjusting parameter to compare results of the EP model with that of the Schrodinger-Poisson solution. The variation of this optimum parameter for various doping profiles at different gate voltages is investigated. The overestimated average inverse charge depth by the EP method is quantified and its reason explained. The EP model is a good practical simulation tool for modeling quantum effects but more work needs to be done to improve its accuracy near the interface.

Keywords

MIS structures; MOSFET; capacitance; doping profiles; effective mass; inversion layers; semiconductor device models; EP model; MOS capacitance; Schrodinger-Poisson solution; doping profiles; effective mass; effective potential modeling; gate bias voltages; gate voltages; inverse charge depth; inversion-layer charge density; one-dimensional MOS structures; optimum parameter; quantum effects; substrate doping profiles; ultrathin oxide MOS structures; Dielectric constant; Dielectric substrates; Doping profiles; Effective mass; Equations; Quantum capacitance; Quantum mechanics; Semiconductor process modeling; Silicon; Voltage;

fLanguage

English

Journal_Title

Nanotechnology, IEEE Transactions on

Publisher

ieee

ISSN

1536-125X

Type

jour

DOI

10.1109/TNANO.2002.807386

Filename

1176971