Suppression of higher-order transverse modes in vertical-cavity lasers by impurity-induced disordering

Author

Floyd, P.D. ; Peters, M.G. ; Coldren, L.A. ; Merz, J.L.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

Volume

7

Issue

12

fYear

1995

Firstpage

1388

Lastpage

1390

Abstract

Etched pillar, bottom emitting vertical cavity surface emitting lasers (VCSELs) employing a zinc diffused and disordered spatial mode filter are fabricated and tested. The filters successfully suppress lasing of higher order transverse modes in VCSELs with diameters greater than 11 μm, while obtaining output powers of up to 1.5 mW with threshold currents as low as 2.7 mA. Emission is entirely single mode, with mode suppression ratio greater than 25 dB up to the highest output power levels.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; laser modes; quantum well lasers; spatial filters; surface emitting lasers; 1.5 mW; 11 mum; 2.7 mA; InGaAs; InGaAs quantum well lasers; VCSELs; bottom emitting vertical cavity surface emitting lasers; disordered spatial mode filter; etched pillar; higher order transverse laser mode suppression; higher-order transverse modes; highest output power levels; impurity-induced disordering; mode suppression ratio; output powers; single mode; threshold currents; vertical-cavity lasers; zinc diffused; Distributed Bragg reflectors; Etching; Filters; Gallium arsenide; Laser modes; Mirrors; Power generation; Surface emitting lasers; Vertical cavity surface emitting lasers; Zinc;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.477258

Filename

477258