• DocumentCode
    1138960
  • Title

    Surface-emitting device with embedded circular grating coupler for possible application to optoelectronic integrated devices

  • Author

    Noda, S. ; Ishikawa, T. ; Imada, M. ; Sasaki, A.

  • Author_Institution
    Dept. of Electron. Sci. & Eng., Kyoto Univ., Japan
  • Volume
    7
  • Issue
    12
  • fYear
    1995
  • Firstpage
    1397
  • Lastpage
    1399
  • Abstract
    A surface-emitting device with an embedded circular grating coupler is developed. A uniform grating coupler with 0.4-μm pitch and 0.15-μm depth is fabricated by electron beam lithography and reactive ion etching. The grating is well embedded by an overgrown layer. It is shown that the lasing oscillation is successfully achieved up to the measured temperature of 196 K where the absorption loss at the grating coupler is well suppressed, and a stable single-longitudinal-mode oscillation is obtained.
  • Keywords
    diffraction gratings; electron beam lithography; integrated optoelectronics; laser cavity resonators; laser modes; laser stability; optical couplers; optical fabrication; semiconductor lasers; sputter etching; surface emitting lasers; 0.15 mum; 0.4 mum; 196 K; absorption loss; electron beam lithography; embedded circular grating coupler; grating coupler; laser diodes; lasing oscillation; optoelectronic integrated devices; overgrown layer; reactive ion etching; stable single-longitudinal-mode oscillation; surface-emitting device; uniform grating coupler; Character generation; Etching; Gratings; Indium phosphide; Integrated circuit interconnections; Lithography; Optical coupling; Resists; Silicon compounds; Substrates;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/68.477261
  • Filename
    477261