Polarization-independent electroabsorption modulators using strain-compensated InGaAs-InAlAs MQW structures

Author

Wakita, K. ; Kotaka, I. ; Yoshino, K. ; Kondo, S. ; Noguchi, Y.

Author_Institution

NTT Opto-Electron. Labs., Kanagawa, Japan

Volume

7

Issue

12

fYear

1995

Firstpage

1418

Lastpage

1420

Abstract

The improved modulation properties of strain compensated InGaAs-InAlAs multiple quantum well (MQW) electroabsorption modulators and their modules have been demonstrated. Introduction of a 0.5% tensile strain in wells and a 0.5% compression in barriers provides highly efficient operation such as a low driving voltage (V/sub 20/ dB=1.6 V) and a large modulation bandwidth (f/sub 3/ dB>20 GHz). This is in addition to low polarization-dependence with an extinction ratio difference between TE and TM and polarization of less than 1 dB.

Keywords

III-V semiconductors; aluminium compounds; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; light polarisation; semiconductor quantum wells; 1.55 mum; 1.6 V; 20 GHz; InGaAs-InAlAs; TE; TM; barriers; compression; extinction ratio difference; highly efficient operation; large modulation bandwidth; low driving voltage; low polarization-dependence; modulation properties; modules; multiple quantum well; polarization-independent electroabsorption modulators; strain-compensated InGaAs-InAlAs MQW structures; tensile strain; Capacitive sensors; Chirp modulation; Low voltage; Optical fiber polarization; Optical modulation; Optical polarization; Optical waveguides; Quantum well devices; Tellurium; Tensile strain;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.477268

Filename

477268