MOSFET electron inversion layer mobilities-a physically based semi-empirical model for a wide temperature range

A physically based semiempirical model for electron mobilities of the MOSFET inversion layers that is valid over a large temperature range (77 K⩽T⩽370 K) is discussed. It is based on a reciprocal sum of three scattering mechanisms, i.e. phonon, Coulomb, and surface roughness scattering, and is explicitly dependent on temperature and transverse electric field. The model is more physically based than other semiempirical models, but has an equivalent number of extracted parameters. It is shown that this model compares more favorably with the experimental data than previous models. The implicit dependencies of the model parameters on oxide charge density and surface roughness are confirmed