• DocumentCode
    1139391
  • Title

    Criterion for SEU Occurrence in SRAM Deduced From Circuit and Device Simulations in Case of Neutron-Induced SER

  • Author

    Mérelle, T. ; Chabane, H. ; Palau, J.-M. ; Castellani-Coulié, K. ; Wrobel, F. ; Saigné, F. ; Sagnes, B. ; Boch, J. ; Vaille, J.R. ; Gasiot, G. ; Roche, P. ; Palau, M.C. ; Carrière, T.

  • Author_Institution
    Univ. de Montpellier II, France
  • Volume
    52
  • Issue
    4
  • fYear
    2005
  • Firstpage
    1148
  • Lastpage
    1155
  • Abstract
    A reliable criterion for SEU occurrence simulation is presented. It expresses the relationship existing at threshold between the magnitude and duration of the ion-induced parasitic pulse. This criterion can be obtained by both three-dimensional device and SPICE simulations. Using this criterion, the simulated and experimental SER on 130 and 250 nm technologies are shown to be in good agreement.
  • Keywords
    SPICE; SRAM chips; neutron effects; semiconductor device models; 130 nm technology; 250 nm technology; SEU occurrence simulation; SPICE simulations; SRAM; device simulations; ion-induced parasitic pulse; neutron-induced SER; Circuit simulation; Computer aided software engineering; Helium; Neutrons; Particle tracking; Protons; Random access memory; SPICE; Space vector pulse width modulation; Target tracking;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2005.852319
  • Filename
    1495820
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1139391