Simultaneous switching noise in on-chip CMOS power distribution networks

Author

Tang, Kevin T. ; Friedman, Eby G.

Author_Institution

Broadcom Corp., San Jose, CA, USA

Volume

10

Issue

4

fYear

2002

Firstpage

487

Lastpage

493

Abstract

Simultaneous switching noise (SSN) has become an important issue in the design of the internal on-chip power distribution networks in current very large scale integration/ultra large scale integration (VLSI/ULSI) circuits. An inductive model is used to characterize the power supply rails when a transient current is generated by simultaneously switching the on-chip registers and logic gates in a synchronous CMOS VLSI/ULSI circuit. An analytical expression characterizing the SSN voltage is presented here based on a lumped inductive-resistive-capacitive RLC model. The peak value of the SSN voltage based on this analytical expression is within 10% as compared to SPICE simulations. Design constraints at both the circuit and layout levels are also discussed based on minimizing the effects of the peak value of the SSN voltage.

Keywords

CMOS digital integrated circuits; ULSI; VLSI; equivalent circuits; inductance; integrated circuit design; integrated circuit interconnections; integrated circuit modelling; integrated circuit noise; power supply circuits; switching transients; CMOS power distribution networks; SSN voltage; ULSI circuits; VLSI circuits; design constraints; inductive model; lumped RLC model; lumped inductive-resistive-capacitive model; on-chip inductance; on-chip power distribution networks; power supply rails characterization; simultaneous switching noise; synchronous CMOS circuit; transient current; ultra large scale integration; very large scale integration; CMOS logic circuits; Circuit noise; Network-on-a-chip; Power systems; RLC circuits; Semiconductor device modeling; Switching circuits; Ultra large scale integration; Very large scale integration; Voltage;

fLanguage

English

Journal_Title

Very Large Scale Integration (VLSI) Systems, IEEE Transactions on

Publisher

ieee

ISSN

1063-8210

Type

jour

DOI

10.1109/TVLSI.2002.800533

Filename

1177355