Optical Simulation and Fabrication of Nitride-Based LEDs With the Inverted Pyramid Sidewalls

Author

Kuo, C.W. ; Lee, Y.C. ; Fu, Y.K. ; Tsai, C.H. ; Wu, M.L. ; Chi, G.C. ; Kuo, C.H. ; Tun, C.J.

Author_Institution

Dept. of Opt. & Photonics, Nat. Central Univ., Jhongli, Taiwan

Volume

15

Issue

4

fYear

2009

Firstpage

1264

Lastpage

1268

Abstract

In this study, the numerical and experimental demonstrations for the enhancement of light-extraction efficiency in nitride-based LEDs with randomly inverted pyramid sidewalls (IPSs) by chemical etching of the chip edge are presented. With 20 mA injection current, it was found that forward voltages were 3.69 and 3.75 V while output powers were 7.07 and 8.95 mW for the conventional LED and inverted pyramid sidewall LED, respectively. The larger LED output power is attributed to the increased light-extraction efficiency by IPSs.

Keywords

III-V semiconductors; etching; gallium compounds; light emitting diodes; optical fabrication; wide band gap semiconductors; GaN; LED fabrication; chemical etching; chip edge; current 20 mA; injection current; inverted pyramid sidewall; light-extraction efficiency; nitride-based LED; optical simulation; power 7.07 mW; power 8.95 mW; voltage 3.69 V; voltage 3.75 V; Inverted pyramid sidewalls (IPSs); LED; simulation; wet etching;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2009.2015335

Filename

5166477