DocumentCode
1139595
Title
Degradation Study of Organic Semiconductor Devices Under Electrical and Optical Stresses
Author
Jassi, Munish ; Gurunath, R. ; Iyer, S. Sundar Kumar
Author_Institution
Magma Design Autom. India Pvt. Ltd., Bangalore
Volume
29
Issue
5
fYear
2008
fDate
5/1/2008 12:00:00 AM
Firstpage
442
Lastpage
444
Abstract
Degradation due to electrical and optical stresses on organic semiconductor devices fabricated with imidazolin-5-one as an active layer is studied in this letter. It is found that while both electrical and optical stresses degrade device performance, the former leads to much faster degradation as compared with the latter. It is found that in electrical-stress degradation, the drop in current is a strong function of the charge flowing through the device during stress (charge fluence). For optical-stress degradation, it is strongly dependent on the duration of stress. It is also found that the input electrical and light energy during the stress may be annealing out some of the defects in the device and, hence, mitigating the degradation due to the applied stress.
Keywords
annealing; organic semiconductors; semiconductor device packaging; semiconductor devices; active layer; annealing; electrical stresses; imidazolin-5-one; optical stresses; organic semiconductor devices; Electron optics; Indium tin oxide; Optical devices; Optical sensors; Organic light emitting diodes; Organic semiconductors; Space technology; Stress; Thermal degradation; Voltage; Annealing; charge fluence; degradation; electrical and optical stresses; imidazolin-5-one; semiconductor device fabrication;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2008.920978
Filename
4494622
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