• DocumentCode
    1139595
  • Title

    Degradation Study of Organic Semiconductor Devices Under Electrical and Optical Stresses

  • Author

    Jassi, Munish ; Gurunath, R. ; Iyer, S. Sundar Kumar

  • Author_Institution
    Magma Design Autom. India Pvt. Ltd., Bangalore
  • Volume
    29
  • Issue
    5
  • fYear
    2008
  • fDate
    5/1/2008 12:00:00 AM
  • Firstpage
    442
  • Lastpage
    444
  • Abstract
    Degradation due to electrical and optical stresses on organic semiconductor devices fabricated with imidazolin-5-one as an active layer is studied in this letter. It is found that while both electrical and optical stresses degrade device performance, the former leads to much faster degradation as compared with the latter. It is found that in electrical-stress degradation, the drop in current is a strong function of the charge flowing through the device during stress (charge fluence). For optical-stress degradation, it is strongly dependent on the duration of stress. It is also found that the input electrical and light energy during the stress may be annealing out some of the defects in the device and, hence, mitigating the degradation due to the applied stress.
  • Keywords
    annealing; organic semiconductors; semiconductor device packaging; semiconductor devices; active layer; annealing; electrical stresses; imidazolin-5-one; optical stresses; organic semiconductor devices; Electron optics; Indium tin oxide; Optical devices; Optical sensors; Organic light emitting diodes; Organic semiconductors; Space technology; Stress; Thermal degradation; Voltage; Annealing; charge fluence; degradation; electrical and optical stresses; imidazolin-5-one; semiconductor device fabrication;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2008.920978
  • Filename
    4494622