• DocumentCode
    1139970
  • Title

    Temperature dependence of single-event transient current induced by heavy-ion microbeam on p+/n/n+ epilayer junctions

  • Author

    Guo, Gang ; Hirao, Toshio ; Laird, Jamie Stuart ; Onoda, Shinobu ; Wakasa, Takeshi ; Yamakawa, Takeshi ; Kamiya, Tomihiro

  • Author_Institution
    Dept. of Nucl. Phys., China Inst. of Atomic Energy, Beijing, China
  • Volume
    51
  • Issue
    5
  • fYear
    2004
  • Firstpage
    2834
  • Lastpage
    2839
  • Abstract
    The temperature dependence of the single event transient current induced by using 15-MeV oxygen heavy-ion microbeam strike on p+/n/n+ epilayer junction diodes has been experimentally investigated over a temperature range of approximately 290 to 450 K. It was found that the heavy-ion induced single event transient currents show different behavior for different temperatures while the collected charges almost keep constant over the temperature range considered.
  • Keywords
    ion beam effects; p-n heterojunctions; semiconductor diodes; transients; 290 to 450 K; charge collection; diffused charge; oxygen heavy-ion microbeam; p+/n/n+ epilayer junctions; pn junction diode; single-event transient; temperature dependence; transient currents; Circuits; Diodes; Plasma temperature; Power system transients; Random access memory; Shape; Space vehicles; Temperature dependence; Temperature distribution; Temperature sensors; Charge collection; diffused charge; pn junction diode; single-event transient; temperature dependence;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2004.835058
  • Filename
    1344425
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1139970