Characteristics of single-event upsets in a fabric switch (AD8151)

Author

Buchner, Stephen ; Carts, Martin A. ; McMorrow, Dale ; Kim, Hak ; Marshall, Paul W. ; LaBel, Kenneth A.

Author_Institution

QSS Group Inc., Seabrook, MD, USA

Volume

51

Issue

5

fYear

2004

Firstpage

2840

Lastpage

2845

Abstract

Two types of single-event effects-bit errors and single-event functional interrupts-were observed during heavy-ion testing of the AD8151 crosspoint switch. Bit errors occurred in bursts with the average number of bits in a burst being dependent on both the ion linear energy transfer (LET) and on the data rate. A pulsed laser was used to identify the locations on the chip where the bit errors and single-event functional interrupts occurred. Bit errors originated in the switches, drivers, and output buffers. Single-event functional interrupts originated in the second-rank latch containing the data specifying the state of each switch in the 33×17 matrix.

Keywords

buffer circuits; driver circuits; error statistics; flip-flops; interrupts; ion beam effects; laser beam effects; network synthesis; switches; AD8151 crosspoint switch; bit errors; drivers; fabric switch; heavy-ion testing; ion linear energy transfer; output buffers; pulsed laser; second-rank latch; single-event functional interrupts; single-event upsets; Communication switching; Fabrics; Instruments; Joining processes; Latches; NASA; Optical pulses; Optical switches; SONET; Storage area networks; Bit errors; fabric switch; heavy ions; pulsed laser; single-event functional interrupt;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2004.835085

Filename

1344426