DocumentCode
1140088
Title
Effect of switching from high to low dose rate on linear bipolar technology radiation response
Author
Boch, J. ; Saigné, F. ; Schrimpf, R.D. ; Fleetwood, D.M. ; Ducret, S. ; Dusseau, L. ; David, J.P. ; Fesquet, J. ; Gasiot, J. ; Ecoffet, R.
Author_Institution
Univ. de Reims, France
Volume
51
Issue
5
fYear
2004
Firstpage
2896
Lastpage
2902
Abstract
The degradation of discrete and integrated-circuit bipolar technologies irradiated at High Dose Rate (HDR) and then switched to Low Dose Rates (LDR) is studied. It is shown that the degradation rate of switched devices is equal to that found at low dose rates for all the tested devices.
Keywords
bipolar integrated circuits; bipolar transistors; dosimetry; radiation effects; switching; bipolar transistor; degradation rate; discrete bipolar technology; high to low dose rate; integrated-circuit bipolar technologies; linear bipolar technology; radiation response; switched devices; switching effects; Charge carriers; Degradation; Hydrogen; Impurities; Ionizing radiation; Protons; Silicon; Space technology; Switches; Testing; Bipolar; IC; device characterization; dose rate; switching experiment; total dose; transistor;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2004.835047
Filename
1344434
Link To Document