Elevated temperature irradiation at high dose rate of commercial linear bipolar ICs

Author

Boch, J. ; Saigne, F. ; Schrimpf, R.D. ; Fleetwood, D.M. ; Cizmarik, R. ; Zander, D.

Author_Institution

Univ. de Reims, France

Volume

51

Issue

5

fYear

2004

Firstpage

2903

Lastpage

2907

Abstract

The effect of high temperature irradiations has been investigated on four types of commercial linear bipolar integrated circuits (ICs) at eight temperatures ranging from 25°C to 150°C for different total doses at a given dose rate. In agreement with results obtained for individual bipolar transistors, the results show that an optimum irradiation temperature exists that leads to a maximum amount of degradation. Results are compared to low dose rate (LDR) irradiations for ICs with npn and pnp input transistors.

Keywords

bipolar analogue integrated circuits; bipolar transistors; dosimetry; radiation effects; 25 to 150 C; bipolar integrated circuits; bipolar transistors; commercial linear bipolar IC; elevated temperature irradiation; high dose rate; high temperature irradiations; low dose rate irradiations; npn input transistors; pnp input transistors; Bipolar integrated circuits; Bipolar transistors; Degradation; Helium; Ionizing radiation; Protons; Space charge; Spontaneous emission; Temperature distribution; Testing; Dose rate; IC; elevated temperature irradiation; integrated circuit; total dose;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2004.835055

Filename

1344435