Low-frequency noise characteristics in p-channel FinFETs

Author

Lee, Jeong-Soo ; Choi, Yang-Kyu ; Ha, Daewon ; King, Tsu-Jae ; Bokor, Jeffrey

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, CA, USA

Volume

23

Issue

12

fYear

2002

Firstpage

722

Lastpage

724

Abstract

We report on the characterization of low-frequency noise in fully depleted (FD) double-gate p-channel FinFETs. While the average noise follows a 1/f dependence, considerable device-to-device variations in noise level are observed due to the statistical fluctuation of the number of oxide traps involved. We found that the low-frequency noise in poly-Si-gated p-FinFETs is mainly governed by the carrier number fluctuation with correlated mobility fluctuation. The low-frequency noise characteristics indicate that the FinFET device can be a promising candidate for analog and RF applications.

Keywords

1/f noise; MOSFET; carrier mobility; semiconductor device measurement; semiconductor device noise; silicon-on-insulator; 1/f dependence; FD-SOI MOSFET; RF applications; analog applications; carrier number fluctuation; device-to-device variations; fully depleted double-gate p-channel FinFETs; low-frequency noise characteristics; mobility fluctuation; noise level; oxide trap statistical fluctuation; p-channel FinFETs; Fabrication; FinFETs; Fluctuations; Low-frequency noise; Measurement standards; Noise level; Radio frequency; Semiconductor device noise; Semiconductor films; Silicon on insulator technology;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2002.805741

Filename

1177965