DocumentCode
1140619
Title
Nitride-Based LEDs With Phosphoric Acid Etched Undercut Sidewalls
Author
Kuo, D.S. ; Chang, Shoou-Jinn ; Ko, T.K. ; Shen, C.F. ; Hon, S.J. ; Hung, S.C.
Author_Institution
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan
Volume
21
Issue
8
fYear
2009
fDate
4/15/2009 12:00:00 AM
Firstpage
510
Lastpage
512
Abstract
We propose a simple defect-selective wet etching method to form oblique sidewalls for GaN-based epitaxial layers with phosphoric acid. Using the same defect-selective wet etching, we also prepared GaN-based light-emitting diodes (LEDs) with undercut sidewalls. Compared with conventional LEDs with vertical sidewalls, it was found that output intensity of the LEDs prepared by defect-selective wet etching was 30% higher.
Keywords
III-V semiconductors; etching; gallium compounds; light emitting diodes; semiconductor epitaxial layers; wide band gap semiconductors; GaN; defect-selective wet etching method; epitaxial layers; light-emitting diodes; nitride-based LED; oblique sidewalls; phosphoric acid etching; undercut sidewalls; GaN; light-emitting diode (LED); phosphoric acid etching; undercut;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/LPT.2009.2014078
Filename
4773202
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