• DocumentCode
    1141320
  • Title

    Room-temperature intersubband emission from GaInAs-AlAsSb quantum cascade structure

  • Author

    Yang, Q.K. ; Manz, C. ; Bronner, W. ; Köhler, K. ; Wagner, J.

  • Author_Institution
    Fraunhofer Inst. for Appl. Solid State Phys., Freiburg, Germany
  • Volume
    40
  • Issue
    21
  • fYear
    2004
  • Firstpage
    1339
  • Lastpage
    1340
  • Abstract
    Room-temperature (300 K) intersubband electroluminescence has been obtained from a quantum cascade structure adopting triple-well vertical-transition active regions, based on Ga0.47In0.53As/AlAs0.56Sb0.44 heterostructures grown lattice-matched on InP substrate by molecular beam epitaxy. The emission peak wavelength varies from 4.3 μm at 77 K to 4.5 μm at 300 K.
  • Keywords
    III-V semiconductors; aluminium compounds; electroluminescence; gallium arsenide; indium compounds; quantum cascade lasers; semiconductor epitaxial layers; 4.3 to 4.5 micron; 77 to 300 K; Ga0.47In0.53As-AlAs0.56Sb0.44; Ga0.47In0.53As/AlAs0.56Sb0.44 heterostructures; GaInAs-AlAsSb quantum cascade structure; InP; InP substrate; emission peak wavelength; molecular beam epitaxial growth; room-temperature intersubband electroluminescence; room-temperature intersubband emission; triple-well vertical-transition active regions;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20046618
  • Filename
    1344887
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1141320