Polycrystalline silicon-germanium thin-film transistors

Author

King, Tsu-Jae ; Saraswat, Krishna C.

Author_Institution

Dept. of Electr. Eng., Stanford Univ., CA, USA

Volume

41

Issue

9

fYear

1994

fDate

9/1/1994 12:00:00 AM

Firstpage

1581

Lastpage

1591

Abstract

The fabrication of p- and n-channel MOS thin-film transistors (TFT´s) in polycrystalline silicon-germanium (poly-Si_1-xGe _x) films is described, and their electrical characteristics are presented. Various technological issues are then addressed in order to provide direction for further work in optimizing the fabrication process. The initial devices fabricated in this work exhibit well behaved electrical characteristics; enhanced performance is expected to accompany improvements in the crystallization and defect-passivation processes. Compared to a poly-Si TFT technology, an optimized poly-Si _1-xGe_x TFT technology may ultimately be able to provide a lower-temperature, shorter-time processing capability at little expense to device performance and it is therefore promising for large-area electronics applications

Keywords

Ge-Si alloys; crystallisation; insulated gate field effect transistors; passivation; semiconductor materials; semiconductor technology; thin film transistors; SiGe; crystallization; defect-passivation; electrical characteristics; fabrication; large-area electronics applications; low-temperature short-time processing; n-channel MOS transistors; optimized technology; p-channel MOS transistors; polycrystalline silicon-germanium thin-film transistors; Annealing; Fabrication; Germanium silicon alloys; Glass; Semiconductor films; Sensor arrays; Silicon germanium; Substrates; Temperature; Thin film transistors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.310109

Filename

310109