• DocumentCode
    1141359
  • Title

    Double layer antireflection coating for high-efficiency passivated emitter silicon solar cells

  • Author

    Zhao, Jianhua ; Wang, Aihua ; Green, Martin A.

  • Author_Institution
    Centre for Photovoltaic Devices & Syst., New South Wales Univ., Kensington, NSW, Australia
  • Volume
    41
  • Issue
    9
  • fYear
    1994
  • fDate
    9/1/1994 12:00:00 AM
  • Firstpage
    1592
  • Lastpage
    1594
  • Abstract
    Recent high-efficiency silicon solar cells employ high-quality oxides both for surface passivation and as a rudimentary antireflection coating. This gives over 3% reflection at the cell front surface, even though the surface is microstructured. A double layer antireflection coating applied to cells with reduced SiO2 thickness reduces the cell reflection. However, although reflection is minimized by reducing the oxide thickness to values below 100 Å, a rapid falloff in both open-circuit voltage and short-circuit current is observed experimentally once this thickness is reduced below 200 Å. The best compromise is found when oxide thickness is 250 Å which allows improved short-circuit current density without appreciable loss in open-circuit voltage
  • Keywords
    antireflection coatings; elemental semiconductors; optical films; passivation; semiconductor technology; silicon; solar cells; Si-SiO2; double layer antireflection coating; high-efficiency passivated emitter silicon solar cells; high-quality oxides; microstructured surface; open-circuit voltage; oxide thickness; short-circuit current; surface passivation; Australia Council; Circuits; Coatings; Etching; Passivation; Photovoltaic cells; Photovoltaic systems; Reflection; Silicon; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.310110
  • Filename
    310110