Corrections to the expression for gain in GaAs

Author

Yan, R.H. ; Corzine, S.W. ; Coldren, L.A. ; Suemune, I.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

Volume

26

Issue

2

fYear

1990

fDate

2/1/1990 12:00:00 AM

Firstpage

213

Lastpage

216

Abstract

When the expressions for gain derived in various papers are compared, a number of inconsistencies are found to exist. These inconsistencies have propagated through the literature and continue to do so. This study is specifically devoted to explaining how these inconsistencies originated so that they will not be repeated in future work on the subject. A general discussion of the matrix element is given, including spin degeneracy considerations, the procedure typically used in estimating the magnitude of the momentum matrix element, as well as the enhancement of the matrix element in quantum well structures. The correct expression for gain and spontaneous emission in semiconductors is given for comparison purposes within the framework of Fermi´s golden rule

Keywords

III-V semiconductors; gallium arsenide; laser transitions; matrix algebra; semiconductor quantum wells; Fermi´s golden rule; GaAs; gain expressions inconsistencies; interband transition matrix element; matrix element; matrix element magnitude; momentum matrix element; quantum well structures; semiconductor gain; semiconductors; spin degeneracy considerations; spontaneous emission; Charge carrier density; Design optimization; Equations; Gallium arsenide; Laser theory; Optical design; Optical materials; Quantum well lasers; Semiconductor lasers; Semiconductor materials; Spontaneous emission;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.44950

Filename

44950