The hydrogenated amorphous silicon reach-through avalanche photodiodes (a-Si:H RAPDs)

Author

Hong, Jyh-Wong ; Chen, Yu-wen ; Laih, Wuu-larng ; Fang, Yean-Kuen ; Chang, Chun-Yen ; Gong, C.

Author_Institution

Semicond. & Syst. Lab., Nat. Chen Kung Univ., Taiwan

Volume

26

Issue

2

fYear

1990

fDate

2/1/1990 12:00:00 AM

Firstpage

280

Lastpage

284

Abstract

The RAPD (reach-through avalanche photodiode) structure is adopted to improve the electrical and optical performance of photosensing devices made of a-Si:H. Both the electron-injection n⁺ -i-δp-i-p⁺ and hole-injection p⁺-i-δn-i-n⁺ a-Si:H RAPDs are fabricated on the indium-tin-oxide-coated glass substrates by plasma-enhanced chemical vapor deposition (PECVD). The photocurrent multiplication method is employed to study the multiplication factors and the impact ionization coefficients of the RAPDs. Since the electron-injection models have better performance, the relationships between the device dimensions and characteristics, such as I-V curves, optical gains, impact ionization rates, and excess noise factors, are further studied. The results indicate that the a-Si:H RAPD is a promising device for photosensing applications

Keywords

amorphous semiconductors; avalanche photodiodes; elemental semiconductors; hydrogen; photodetectors; plasma CVD; silicon; substrates; I-V curves; ITO; InSnO; Si:H; electrical performance; electron-injection; electron-injection models; excess noise factors; glass substrates; hole-injection; hydrogenated amorphous silicon reach-through avalanche photodiodes; impact ionization coefficients; impact ionization rates; multiplication factors; optical gains; optical performance; photocurrent multiplication method; photosensing applications; photosensing devices; plasma-enhanced chemical vapor deposition; Amorphous silicon; Avalanche photodiodes; Chemical vapor deposition; Glass; Impact ionization; Optical devices; Optical noise; Plasma chemistry; Plasma devices; Plasma properties;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.44959

Filename

44959