Degradation of zinc-diffused GaAs electroluminescent diodes

A physical model is considered to describe the gradual degradation of Zn-diffused GaAs electroluminescent diodes. This model is based on the postulation that new recombination centers are formed during the degradation process. Evidence of the formation of these new centers is established through the measurement of the injected carrier lifetime. Experimental variations of quantum efficiencies, current-voltage characteristics, and light-current curves resulting from degradation tests are obtained. These experimental data agree with the calculated results based on the proposed model.