X- and Ka-band power performance of AlGaN/GaN HEMTs grown by ammonia-MBE

Author

Pei, Y. ; Poblenz, C. ; Cordon, A.L. ; Chu, R. ; Shen, L. ; Speck, J.S. ; Mishra, U.K.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA

Volume

44

Issue

9

fYear

2008

Firstpage

598

Lastpage

598

Abstract

A report is presented on the power performance of deep submicron AIGaN/GaN high electron mobility transistors grown by ammonia molecular beam epitaxy. At 10 GHz, 70% power-added-efficiency (PAE) and 3 W/mm power density were demonstrated at a drain bias of 20 V. At 30 GHz, 31% PAE and 6.5 W/mm power density were achieved at a drain bias of 40 V.

Keywords

III-V semiconductors; aluminium compounds; ammonia; chemical beam epitaxial growth; gallium compounds; high electron mobility transistors; microwave field effect transistors; millimetre wave field effect transistors; molecular beam epitaxial growth; semiconductor growth; wide band gap semiconductors; AlGaN-GaN; HEMT; Ka-band power performance; NH₃; X-band operation; ammonia molecular beam epitaxy; ammonia-MBE; drain bias; efficiency 70 percent; frequency 10 GHz; frequency 30 GHz; high electron mobility transistor growth; power density; power-added-efficiency; voltage 20 V; voltage 40 V; Aluminum gallium nitride; Gallium nitride; HEMTs; MODFETs; Molecular beam epitaxial growth; Performance evaluation; Plasmas;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20080669

Filename

4497350